BRB50N06 PDF and Equivalents Search

 

BRB50N06 Specs and Replacement

Type Designator: BRB50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO263

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BRB50N06 datasheet

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 brb50n06.pdf pdf_icon

BRB50N06

BRB50N06(BRCS50N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC ... See More ⇒

Detailed specifications: AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , JCS2N60F , SI4963DY , TK10A60D , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 .

Keywords - BRB50N06 MOSFET specs

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