All MOSFET. BRD15P06 Datasheet

 

BRD15P06 Datasheet and Replacement


   Type Designator: BRD15P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252
 

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BRD15P06 Datasheet (PDF)

 ..1. Size:772K  blue-rocket-elect
 brd15p06.pdf pdf_icon

BRD15P06

BRD15P06(BRCS15P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on)Super high dense cell design for low RDS(on). / Applications DC/DC

 9.1. Size:816K  blue-rocket-elect
 brd15n10.pdf pdf_icon

BRD15P06

BRD15N10 Rev.F Oct.-2018 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

Datasheet: SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , 75N75 , BRD17N10 , BRD18N06 , BRD18P06 , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 .

History: JCS2N60F | BRD1N60 | JCS2N60V

Keywords - BRD15P06 MOSFET datasheet

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