All MOSFET. BRD15P06 Datasheet

 

BRD15P06 Datasheet and Replacement


   Type Designator: BRD15P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252
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BRD15P06 Datasheet (PDF)

 ..1. Size:772K  blue-rocket-elect
 brd15p06.pdf pdf_icon

BRD15P06

BRD15P06(BRCS15P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on)Super high dense cell design for low RDS(on). / Applications DC/DC

 9.1. Size:816K  blue-rocket-elect
 brd15n10.pdf pdf_icon

BRD15P06

BRD15N10 Rev.F Oct.-2018 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AFN4422 | STD4NK60Z | KNB2710A | STD50N03L-1 | 2SJ505L | IRFR9120NPBF | IRFR48ZTR

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