BRD18P06 PDF and Equivalents Search

 

BRD18P06 Specs and Replacement

Type Designator: BRD18P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: TO252

BRD18P06 substitution

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BRD18P06 datasheet

 ..1. Size:840K  blue-rocket-elect
 brd18p06.pdf pdf_icon

BRD18P06

BRD18P06(BRCS18P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ESD Super high dense cell design for low RDS(on) Rugged and reliable surface mount package ESD protecte... See More ⇒

 9.1. Size:1210K  blue-rocket-elect
 brd18n06.pdf pdf_icon

BRD18P06

BRD18N06(BRCS18N06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on) Rugged and reliable surface mount package. / Applications ... See More ⇒

Detailed specifications: BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 , BRD18N06 , SI2302 , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 , BRD3N80 , BRD4N60 , BRD4N65 .

Keywords - BRD18P06 MOSFET specs

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