All MOSFET. BRD18P06 Datasheet

 

BRD18P06 Datasheet and Replacement


   Type Designator: BRD18P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: TO252
 

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BRD18P06 Datasheet (PDF)

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BRD18P06

BRD18P06(BRCS18P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ESD Super high dense cell design for low RDS(on) Rugged and reliablesurface mount packageESD protecte

 9.1. Size:1210K  blue-rocket-elect
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BRD18P06

BRD18N06(BRCS18N06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on)Rugged and reliablesurface mount package. / Applications

Datasheet: BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 , BRD18N06 , IRFZ46N , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 , BRD3N80 , BRD4N60 , BRD4N65 .

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