All MOSFET. BRD1N60 Datasheet

 

BRD1N60 Datasheet and Replacement


   Type Designator: BRD1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO252
 

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BRD1N60 Datasheet (PDF)

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BRD1N60

BRD1N60(BRCS1N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

Datasheet: BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , BRD17N10 , BRD18N06 , BRD18P06 , 7N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 , BRD3N80 , BRD4N60 , BRD4N65 , BRD50N03 .

Keywords - BRD1N60 MOSFET datasheet

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