All MOSFET. BRD6N60 Datasheet

 

BRD6N60 Datasheet and Replacement


   Type Designator: BRD6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO252
 

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BRD6N60 Datasheet (PDF)

 ..1. Size:751K  blue-rocket-elect
 brd6n60.pdf pdf_icon

BRD6N60

BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features DS dv/dt Low RDS(ON)Low gate chargeLow Crss Fast switchingImproved dv/dt capability.

 9.1. Size:896K  blue-rocket-elect
 brd6n70.pdf pdf_icon

BRD6N60

BRD6N70(BRCS6N70D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. / Applications

Datasheet: BRD3N80 , BRD4N60 , BRD4N65 , BRD50N03 , BRD50N06 , BRD5N50 , BRD5N60 , BRD630 , IRF1405 , BRD6N70 , BRD70N03 , BRF10N60 , BRF10N65 , BRF10N80 , BRF12N60 , BRF12N65 , BRF13N50 .

History: IRFS3307 | IRFS3307Z

Keywords - BRD6N60 MOSFET datasheet

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