BRD6N60 Specs and Replacement
Type Designator: BRD6N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
BRD6N60 substitution
- MOSFET ⓘ Cross-Reference Search
BRD6N60 datasheet
brd6n60.pdf
BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features DS dv/dt Low RDS(ON) Low gate charge Low Crss Fast switching Improved dv/dt capability. ... See More ⇒
Detailed specifications: BRD3N80, BRD4N60, BRD4N65, BRD50N03, BRD50N06, BRD5N50, BRD5N60, BRD630, STP65NF06, BRD6N70, BRD70N03, BRF10N60, BRF10N65, BRF10N80, BRF12N60, BRF12N65, BRF13N50
Keywords - BRD6N60 MOSFET specs
BRD6N60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMP13N50C4
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