BRD6N70 Specs and Replacement
Type Designator: BRD6N70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 87.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO252
BRD6N70 substitution
- MOSFET ⓘ Cross-Reference Search
BRD6N70 datasheet
brd6n60.pdf
BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features DS dv/dt Low RDS(ON) Low gate charge Low Crss Fast switching Improved dv/dt capability. ... See More ⇒
Detailed specifications: BRD4N60, BRD4N65, BRD50N03, BRD50N06, BRD5N50, BRD5N60, BRD630, BRD6N60, IRF1405, BRD70N03, BRF10N60, BRF10N65, BRF10N80, BRF12N60, BRF12N65, BRF13N50, BRF15N65
Keywords - BRD6N70 MOSFET specs
BRD6N70 cross reference
BRD6N70 equivalent finder
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BRD6N70 substitution
BRD6N70 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMN36N65C4 | WML28N50C4 | SM8A01NSW | WMM36N60C4 | BFD88
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