All MOSFET. CS8205 Datasheet

 

CS8205 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT-23-6

 CS8205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8205 Datasheet (PDF)

 0.1. Size:289K  toshiba
 tpcs8205.pdf

CS8205 CS8205

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10

 0.2. Size:292K  can-sheng
 cs8205a 6a sot-23-6.pdf

CS8205 CS8205

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

 0.3. Size:387K  can-sheng
 cs8205a sot-23-6.pdf

CS8205 CS8205

 0.4. Size:278K  can-sheng
 cs8205b.pdf

CS8205 CS8205

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6VDS=19.5V,ID=6A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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