All MOSFET. CS8205 Datasheet

 

CS8205 Datasheet and Replacement


   Type Designator: CS8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT-23-6
 

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CS8205 Datasheet (PDF)

 0.1. Size:289K  toshiba
tpcs8205.pdf pdf_icon

CS8205

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10

 0.2. Size:292K  can-sheng
cs8205a 6a sot-23-6.pdf pdf_icon

CS8205

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

 0.3. Size:387K  can-sheng
cs8205a sot-23-6.pdf pdf_icon

CS8205

 0.4. Size:278K  can-sheng
cs8205b.pdf pdf_icon

CS8205

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6VDS=19.5V,ID=6A RDS(ON)

Datasheet: BRF8N65 , BRF8N80 , CS1N60D , CS2N60D , CS4N60D , CS1N60 , CS4N65 , CS2300 , 10N60 , FS8205A , CS2301 , CS2302 , CS3401 , YW3407 , CS8205B , CS8205A , BRI1N60 .

History: IRF6729MPBF

Keywords - CS8205 MOSFET datasheet

 CS8205 cross reference
 CS8205 equivalent finder
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