BRI1N60 Datasheet and Replacement
Type Designator: BRI1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO251
BRI1N60 substitution
BRI1N60 Datasheet (PDF)
bri1n60.pdf
BRI1N60(BRCS1N60I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef
Datasheet: CS8205 , FS8205A , CS2301 , CS2302 , CS3401 , YW3407 , CS8205B , CS8205A , 2SK3878 , BRI20N03 , BRI2N60 , BRI2N65 , BRI3N25 , BRI3N80 , BRI4N60 , BRI4N65 , BRI50N03 .
Keywords - BRI1N60 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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