BRI1N60 PDF and Equivalents Search

 

BRI1N60 Specs and Replacement

Type Designator: BRI1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO251

BRI1N60 substitution

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BRI1N60 datasheet

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BRI1N60

BRI1N60(BRCS1N60I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef... See More ⇒

Detailed specifications: CS8205, FS8205A, CS2301, CS2302, CS3401, YW3407, CS8205B, CS8205A, P55NF06, BRI20N03, BRI2N60, BRI2N65, BRI3N25, BRI3N80, BRI4N60, BRI4N65, BRI50N03

Keywords - BRI1N60 MOSFET specs

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