All MOSFET. BRI6N70 Datasheet

 

BRI6N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: BRI6N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 87.8 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO251

BRI6N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRI6N70 Datasheet (PDF)

1.1. bri6n70.pdf Size:704K _blue-rocket-elect

BRI6N70
BRI6N70

BRI6N70(BRCS6N70I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 开关速度快,低导通电阻,低栅极电荷,低反向传输电容。 Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. 用途 / Applications 用于小型化

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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