All MOSFET. BRL2N60 Datasheet

 

BRL2N60 Datasheet and Replacement


   Type Designator: BRL2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO126
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BRL2N60 Datasheet (PDF)

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BRL2N60

BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

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