All MOSFET. BRM501D Datasheet

 

BRM501D Datasheet and Replacement


   Type Designator: BRM501D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.14 nC
   tr ⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT23
 

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BRM501D Datasheet (PDF)

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BRM501D

BRM501D(BRCS501DM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ESD V -1.8V GS(th)ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type). / Applications This device is suitable fo

Datasheet: BRI4N65 , BRI50N03 , BRI5N50 , BRI5N60 , BRI630 , BRI6N70 , BRI70N03 , BRL2N60 , 8205A , BRP50N20 , BRS1N60 , BRS1N70 , BRS1N80 , BRS3N25 , BRU20N50 , IRFB830 , IRFH3205 .

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