BRM501D Specs and Replacement
Type Designator: BRM501D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55.8 nS
Cossⓘ - Output Capacitance: 4.53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: SOT23
BRM501D substitution
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BRM501D datasheet
brm501d.pdf
BRM501D(BRCS501DM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ESD V -1.8V GS(th) ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type). / Applications This device is suitable fo... See More ⇒
Detailed specifications: BRI4N65, BRI50N03, BRI5N50, BRI5N60, BRI630, BRI6N70, BRI70N03, BRL2N60, IRFP260, BRP50N20, BRS1N60, BRS1N70, BRS1N80, BRS3N25, BRU20N50, IRFB830, IRFH3205
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History: IPW60R120P7
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