BRP50N20 Specs and Replacement
Type Designator: BRP50N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 445 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO3P
BRP50N20 substitution
- MOSFET ⓘ Cross-Reference Search
BRP50N20 datasheet
Detailed specifications: BRI50N03, BRI5N50, BRI5N60, BRI630, BRI6N70, BRI70N03, BRL2N60, BRM501D, 4435, BRS1N60, BRS1N70, BRS1N80, BRS3N25, BRU20N50, IRFB830, IRFH3205, SI2306
Keywords - BRP50N20 MOSFET specs
BRP50N20 cross reference
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BRP50N20 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BSC032NE2LS
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