BRU20N50 Specs and Replacement
Type Designator: BRU20N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO3P
BRU20N50 substitution
- MOSFET ⓘ Cross-Reference Search
BRU20N50 datasheet
Detailed specifications: BRI70N03, BRL2N60, BRM501D, BRP50N20, BRS1N60, BRS1N70, BRS1N80, BRS3N25, AON7410, IRFB830, IRFH3205, SI2306, VTI630, VTI630F, VTI634F, VTI640, VTI640F
Keywords - BRU20N50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRLZ24NL | BSC050N03LS | BRS1N70 | BSC054N04NSG
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