All MOSFET. VTI640 Datasheet

 

VTI640 Datasheet and Replacement


   Type Designator: VTI640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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VTI640 Datasheet (PDF)

 ..1. Size:1269K  blue-rocket-elect
 vti640.pdf pdf_icon

VTI640

VTI640(BRCS640R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

 0.1. Size:992K  blue-rocket-elect
 vti640f.pdf pdf_icon

VTI640

VTI640F(BRCS640F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.15,Typical RDS(on)=0.15,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

Datasheet: BRS3N25 , BRU20N50 , IRFB830 , IRFH3205 , SI2306 , VTI630 , VTI630F , VTI634F , IRLB4132 , VTI640F , SSP2N60B , SSS2N60B , 2SK4100LS , 2SK1460 , 2SK2010 , 2SK1033 , 2SK1035 .

History: HY3810PM | HY3810P | BSO203PH

Keywords - VTI640 MOSFET datasheet

 VTI640 cross reference
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