VTI640 Specs and Replacement
Type Designator: VTI640
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
VTI640 substitution
- MOSFET ⓘ Cross-Reference Search
VTI640 datasheet
vti640.pdf
VTI640(BRCS640R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3 , Typical RDS(on)=0.3 ,low intrinsic capacitance Ciss, fast switching. / Applications , ,DC-DC ... See More ⇒
Detailed specifications: BRS3N25, BRU20N50, IRFB830, IRFH3205, SI2306, VTI630, VTI630F, VTI634F, CS150N03A8, VTI640F, SSP2N60B, SSS2N60B, 2SK4100LS, 2SK1460, 2SK2010, 2SK1033, 2SK1035
Keywords - VTI640 MOSFET specs
VTI640 cross reference
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VTI640 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SI9410BDY-T1
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