2SK123 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK123
   Marking Code: 1H
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.002 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
   Package: MINI-TYPE-FLAT

2SK123 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK123 Datasheet (PDF)

..1. Size:28K panasonic
2sk123.pdf

Silicon Junction FETs (Small Signal) 2SK1232SK123Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.25.8 -0.3For electret capacitor microphone+0.251.52.4 0.1 -0.051.9 0.1 Features 1 High mutual conductance gm3 Low noise voltage of NV2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1 : DrainDrain-Source vol

..2. Size:41K panasonic
2sk0123 2sk123.pdf

Silicon Junction FETs (Small Signal)2SK0123 (2SK123)Silicon N-Channel Junction FETFor impedance conversion in low frequencyUnit: mmFor electret capacitor microphone0.40+0.100.050.16+0.100.063 Features High mutual conductance gm Low noise voltage of NV1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings (Ta = 25C)10Parameter Symbol

0.1. Size:45K sanyo
2sk1238.pdf