2SK123 Datasheet and Replacement
Type Designator: 2SK123
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.002 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1000 Ohm
Package: MINI-TYPE-FLAT
2SK123 substitution
2SK123 Datasheet (PDF)
2sk123.pdf

Silicon Junction FETs (Small Signal) 2SK1232SK123Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.25.8 -0.3For electret capacitor microphone+0.251.52.4 0.1 -0.051.9 0.1 Features 1 High mutual conductance gm3 Low noise voltage of NV2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1 : DrainDrain-Source vol
2sk0123 2sk123.pdf

Silicon Junction FETs (Small Signal)2SK0123 (2SK123)Silicon N-Channel Junction FETFor impedance conversion in low frequencyUnit: mmFor electret capacitor microphone0.40+0.100.050.16+0.100.063 Features High mutual conductance gm Low noise voltage of NV1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings (Ta = 25C)10Parameter Symbol
Datasheet: 2SK1066 , 2SK1067 , 2SK1068 , 2SK1069 , 2SK1103 , 2SK1104 , 2SK1214 , 2SK1228 , IRFB31N20D , 2SK1233 , 2SK1234 , 2SK1235 , 2SK1236 , 2SK1237 , 2SK1238 , 2SK1239 , 2SK1255 .
History: STB12N120K5 | WMK28N60F2 | STL13N65M2 | HCD90R1K6 | RU2H50Q | NCEP01T12 | GSM4637
Keywords - 2SK123 MOSFET datasheet
2SK123 cross reference
2SK123 equivalent finder
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2SK123 replacement
History: STB12N120K5 | WMK28N60F2 | STL13N65M2 | HCD90R1K6 | RU2H50Q | NCEP01T12 | GSM4637



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