HUF76413D3S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76413D3S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056
Ohm
Package:
TO252AA
HUF76413D3S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76413D3S
Datasheet (PDF)
4.1. Size:204K fairchild semi
huf76413d3-s.pdf 
HUF76413D3, HUF76413D3SData Sheet December 200120A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN DRAINSOURCE- rDS(ON) = 0.049, VGS = 10V (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.056, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
5.1. Size:617K fairchild semi
huf76413dk f085.pdf
October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr
6.1. Size:104K intersil
huf76413p3.pdf
HUF76413P3Data Sheet November 1999 File Number 4723.122A, 60V, 0.056 Ohm, N-Channel, LogicLevel UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.049, VGS = 10VSOURCE- rDS(ON) = 0.056, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectrical Models- Spice and SABER Thermal Im
Datasheet: HUF76407D3
, HUF76407D3S
, HUF76407DK8
, HUF76407P3
, HUF76409D3
, HUF76409D3S
, HUF76409P3
, HUF76413D3
, IRLB4132
, HUF76413P3
, HUF76419D3
, HUF76419D3S
, HUF76419P3
, HUF76419S3S
, HUF76423D3
, HUF76423D3S
, HUF76423P3
.
