All MOSFET. HUF76429P3 Datasheet

 

HUF76429P3 Datasheet and Replacement


   Type Designator: HUF76429P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO220AB
 

 HUF76429P3 substitution

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HUF76429P3 Datasheet (PDF)

 6.1. Size:346K  fairchild semi
 huf76429d f085.pdf pdf_icon

HUF76429P3

HUFA76429D3ST_F085 Data Sheet September 201020A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Im

 6.2. Size:285K  fairchild semi
 huf76429d3st.pdf pdf_icon

HUF76429P3

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 6.3. Size:206K  fairchild semi
 huf76429s3st.pdf pdf_icon

HUF76429P3

HUF76429P3, HUF76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 6.4. Size:288K  fairchild semi
 huf76429d3-s.pdf pdf_icon

HUF76429P3

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

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Datasheet: HUF76419P3 , HUF76419S3S , HUF76423D3 , HUF76423D3S , HUF76423P3 , HUF76423S3S , HUF76429D3 , HUF76429D3S , AON7506 , HUF76429S3S , HUF76432P3 , HUF76432S3S , HUF76437P3 , HUF76437S3S , HUF76439P3 , HUF76439S3S , HUF76443P3 .

Keywords - HUF76429P3 MOSFET datasheet

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