SSF1341 Specs and Replacement

Type Designator: SSF1341

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

SSF1341 substitution

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SSF1341 datasheet

 ..1. Size:369K  silikron
ssf1341.pdf pdf_icon

SSF1341

SSF1341 D DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -12V,ID = -3.5A RDS(ON) ... See More ⇒

 9.1. Size:393K  secos
ssf1331p.pdf pdf_icon

SSF1341

SSF1331P -1.5A, -30V, RDS(on) 0.112 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323 high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters... See More ⇒

 9.2. Size:448K  secos
ssf1321p.pdf pdf_icon

SSF1341

SSF1321P -1.7A, -20V, RDS(on) 0.079 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323 RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters... See More ⇒

 9.3. Size:393K  secos
ssf1320n.pdf pdf_icon

SSF1341

SSF1320N 2A , 20V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. ... See More ⇒

Detailed specifications: SSF11NS65F, SSF11NS65U, SSF11NS65UD, SSF11NS70UF, SSF11NS70UG, SSF1221J2, SSF12N60F, SSF12N65F, AOD4184A, SSF13N50, SSF13N50F, SSF1502D, SSF1502G5, SSF1504D, SSF1526, SSF1530, SSF18N50F

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