SSF3117 Specs and Replacement

Type Designator: SSF3117

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN2X2-6L

SSF3117 substitution

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SSF3117 datasheet

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 ssf3117.pdf pdf_icon

SSF3117

SSF3117 DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -3.3A RDS(ON) ... See More ⇒

Detailed specifications: SSF3018, SSF3018D, SSF3028C1, SSF3036C, SSF3051G7, SSF3055, SSF3056C, SSF3092G1, IRF2807, SSF32E0E, SSF3314E, SSF3322, SSF3324, SSF3338, SSF3339, SSF3341, SSF3341L

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.