All MOSFET. SSF3117 Datasheet

 

SSF3117 Datasheet and Replacement


   Type Designator: SSF3117
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN2X2-6L
      - MOSFET Cross-Reference Search

 

SSF3117 Datasheet (PDF)

 ..1. Size:286K  silikron
 ssf3117.pdf pdf_icon

SSF3117

SSF3117 DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -3.3A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQB33N10 | HRLU150N10K

Keywords - SSF3117 MOSFET datasheet

 SSF3117 cross reference
 SSF3117 equivalent finder
 SSF3117 lookup
 SSF3117 substitution
 SSF3117 replacement

 

 
Back to Top

 


 
.