All MOSFET. SSF3117 Datasheet

 

SSF3117 Datasheet and Replacement


   Type Designator: SSF3117
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN2X2-6L
 

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SSF3117 Datasheet (PDF)

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SSF3117

SSF3117 DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -3.3A RDS(ON)

Datasheet: SSF3018 , SSF3018D , SSF3028C1 , SSF3036C , SSF3051G7 , SSF3055 , SSF3056C , SSF3092G1 , IRFB31N20D , SSF32E0E , SSF3314E , SSF3322 , SSF3324 , SSF3338 , SSF3339 , SSF3341 , SSF3341L .

History: APT75F50B2 | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K

Keywords - SSF3117 MOSFET datasheet

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