SSF3428
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF3428
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034
Ohm
Package:
TSOP6
SSF3428
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF3428
Datasheet (PDF)
..1. Size:288K silikron
ssf3428.pdf
SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON)
8.1. Size:360K silikron
ssf3420.pdf
SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = 30V,ID =6.3A RDS(ON)
9.1. Size:303K silikron
ssf3402.pdf
SSF3402 DDESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagram GENERAL FEATURES VDS = 30V,ID = 5A RDS(ON)
9.2. Size:428K silikron
ssf3416.pdf
SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)
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