SSF3N80D Specs and Replacement

Type Designator: SSF3N80D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 50.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO252

SSF3N80D substitution

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SSF3N80D datasheet

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SSF3N80D

SSF3N80D Main Product Characteristics VDSS 800V RDS(on) 3.8 (typ.) ID 3A Marking and p in TO-252 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

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SSF3N80D

SSF3N80F Main Product Characteristics VDSS 800V RDS(on) 3.7 (typ.) ID 3A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove... See More ⇒

Detailed specifications: SSF3637, SSF3637S, SSF3639C, SSF3641, SSF3745, SSF3904A, SSF3944J7-HF, SSF3960J7-HF, IRF540, SSF3N80F, SSF4004, SSF4004S, SSF4015, SSF4031C1, SSF4032CH3, SSF4203, SSF4414

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