All MOSFET. SSF3N80D Datasheet

 

SSF3N80D Datasheet and Replacement


   Type Designator: SSF3N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.2 nS
   Cossⓘ - Output Capacitance: 50.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
 

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SSF3N80D Datasheet (PDF)

 ..1. Size:462K  silikron
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SSF3N80D

SSF3N80D Main Product Characteristics: VDSS 800V RDS(on) 3.8 (typ.) ID 3A Marking and p in TO-252 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:534K  silikron
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SSF3N80D

SSF3N80F Main Product Characteristics: VDSS 800V RDS(on) 3.7 (typ.) ID 3A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

Datasheet: SSF3637 , SSF3637S , SSF3639C , SSF3641 , SSF3745 , SSF3904A , SSF3944J7-HF , SSF3960J7-HF , IRF540N , SSF3N80F , SSF4004 , SSF4004S , SSF4015 , SSF4031C1 , SSF4032CH3 , SSF4203 , SSF4414 .

History: STP9NK65Z | CS11N90V

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