SSF4953 Datasheet and Replacement
Type Designator: SSF4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP8
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SSF4953 Datasheet (PDF)
ssf4953.pdf

SSF4953D1D2DESCRIPTION The SSF4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2Schematic diagram GENERAL FEATURES D1 D1 D2 D2VDS = -30V,ID = -5.3A 7 6 58RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SIHF9520S | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL
Keywords - SSF4953 MOSFET datasheet
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History: SIHF9520S | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL



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