SSF4953 Specs and Replacement
Type Designator: SSF4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP8
SSF4953 substitution
- MOSFET ⓘ Cross-Reference Search
SSF4953 datasheet
ssf4953.pdf
SSF4953 D1 D2 DESCRIPTION The SSF4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES D1 D1 D2 D2 VDS = -30V,ID = -5.3A 7 6 5 8 RDS(ON) ... See More ⇒
Detailed specifications: SSF4414, SSF4604, SSF4606, SSF4607D, SSF4624, SSF4703, SSF4703DC, SSF47NS60H, 2N7000, SSF4N60, SSF4N60D, SSF4N60F, SSF4N60G, SSF4NS60D, SSF53A0E, SSF5506, SSF5508A
Keywords - SSF4953 MOSFET specs
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History: SSF4703 | RF1S30P05SM
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