SSF53A0E MOSFET. Datasheet pdf. Equivalent

   Type Designator: SSF53A0E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.36 W
   Maximum Drain-Source Voltage |Vds|: 50 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.1 V
   Maximum Drain Current |Id|: 0.22 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 1.7 nC
   Rise Time (tr): 9 nS
   Drain-Source Capacitance (Cd): 15 pF
   Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm
   Package: SOT23-3L

SSF53A0E Transistor Equivalent Substitute - MOSFET Cross-Reference Search