SSF6401 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF6401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 4.3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SOT23
SSF6401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF6401 Datasheet (PDF)
1.1. ssf6401.pdf 
Size:508K _silikron
SSF6401 D DESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as -0.4V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -4.3A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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