All MOSFET. SSF6401 Datasheet

 

SSF6401 Datasheet and Replacement


   Type Designator: SSF6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.8 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

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SSF6401 Datasheet (PDF)

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SSF6401

SSF6401DDESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as -0.4V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON)

Datasheet: SSF6014A , SSF6014D , SSF6014J7 , SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , 75N75 , SSF6646 , SSF6670 , SSF6808 , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 .

History: R6576ENZ1 | STB20NM60

Keywords - SSF6401 MOSFET datasheet

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