SSF6401 Specs and Replacement
Type Designator: SSF6401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
SSF6401 substitution
SSF6401 datasheet
ssf6401.pdf
SSF6401 D DESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as -0.4V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON) ... See More ⇒
Detailed specifications: SSF6014A , SSF6014D , SSF6014J7 , SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , 18N50 , SSF6646 , SSF6670 , SSF6808 , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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