All MOSFET. SSF6670 Datasheet

 

SSF6670 Datasheet and Replacement


   Type Designator: SSF6670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOP8
 

 SSF6670 substitution

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SSF6670 Datasheet (PDF)

 ..1. Size:453K  silikron
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SSF6670

SSF6670 DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =3.5A R

 9.1. Size:331K  silikron
 ssf6646.pdf pdf_icon

SSF6670

SSF6646 DESCRIPTION The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =4.5A R

Datasheet: SSF6014J7 , SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , SSF6401 , SSF6646 , CS150N03A8 , SSF6808 , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 , SSF6N40D , SSF6N60G .

History: IRF7351PBF | SISA18ADN | SIR164ADP | SI5486DU | NTMTS0D7N06CL | WMQ30P04T1

Keywords - SSF6670 MOSFET datasheet

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