SSF6670 Specs and Replacement

Type Designator: SSF6670

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOP8

SSF6670 substitution

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SSF6670 datasheet

 ..1. Size:453K  silikron
 ssf6670.pdf pdf_icon

SSF6670

SSF6670 DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =3.5A R ... See More ⇒

 9.1. Size:331K  silikron
 ssf6646.pdf pdf_icon

SSF6670

SSF6646 DESCRIPTION The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =4.5A R ... See More ⇒

Detailed specifications: SSF6014J7, SSF6014J8, SSF6025, SSF6072G5, SSF6092G1, SSF6114, SSF6401, SSF6646, IRF520, SSF6808, SSF6808A, SSF6808D, SSF6814, SSF6816, SSF6908, SSF6N40D, SSF6N60G

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