SSF6670 Datasheet and Replacement
Type Designator: SSF6670
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP8
SSF6670 substitution
SSF6670 Datasheet (PDF)
ssf6670.pdf
SSF6670 DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =3.5A R
ssf6646.pdf
SSF6646 DESCRIPTION The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =4.5A R
Datasheet: SSF6014J7 , SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , SSF6401 , SSF6646 , IRF520 , SSF6808 , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 , SSF6N40D , SSF6N60G .
History: SQM100N04-2M7 | NCE70N900
Keywords - SSF6670 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SQM100N04-2M7 | NCE70N900
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