SSF7509J7 PDF and Equivalents Search

 

SSF7509J7 Specs and Replacement


   Type Designator: SSF7509J7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 352 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PQFN5X6
 

 SSF7509J7 substitution

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SSF7509J7 datasheet

 ..1. Size:300K  silikron
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SSF7509J7

SSF7509J7 Main Product Characteristics VDSS 80V RDS(on) 7.5mohm(typ.) ID 70A Marking and pin PQFN5*6 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

 7.1. Size:482K  silikron
ssf7509b.pdf pdf_icon

SSF7509J7

SSF7509B Main Product Characteristics VDSS 70V RDS(on) 5.3m (typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

 7.2. Size:396K  silikron
ssf7509a.pdf pdf_icon

SSF7509J7

SSF7509A Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175... See More ⇒

 7.3. Size:392K  silikron
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SSF7509J7

SSF7509 Feathers ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The SSF7509 is a new generation of middle voltage and high current N Channel enhancement ... See More ⇒

Detailed specifications: SSF7504A7 , SSF7504H , SSF7505 , SSF7507 , SSF7508 , SSF7508A , SSF7509A , SSF7509B , IRF740 , SSF7510 , SSF7604 , SSF7607 , SSF7609 , SSF7610 , SSF7N60 , SSF7N60F , SSF7N65F .

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