All MOSFET. SSF8509 Datasheet

 

SSF8509 Datasheet and Replacement


   Type Designator: SSF8509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 352 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
 

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SSF8509 Datasheet (PDF)

 ..1. Size:350K  silikron
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SSF8509

SSF8509Main Product Characteristics: VDSS 85V RDS(on) 7mohm(typ.)ID 80AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 9.1. Size:287K  silikron
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SSF8509

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON)

Datasheet: SSPL6040 , SSPL6040D , SSF80100 , SSF8205 , SSF8205A , SSF8205U , SSF8205UH2 , SSF8421 , K3569 , SSF8521 , SSF8810 , SSF8822 , SSF8N60 , SSF8N65 , SSF8N80 , SSF8N80F , SSF8N80ZH .

History: SSF8205UH2 | STP95N4F3 | LSGC04R035 | INJ0011AC1 | 2SK2896-01S | CEP01N65 | APT8M80K

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