SSF8509 Specs and Replacement

Type Designator: SSF8509

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.2 nS

Cossⓘ - Output Capacitance: 352 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

SSF8509 substitution

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SSF8509 datasheet

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 ssf8509.pdf pdf_icon

SSF8509

SSF8509 Main Product Characteristics VDSS 85V RDS(on) 7mohm(typ.) ID 80A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ... See More ⇒

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 ssf8521.pdf pdf_icon

SSF8509

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON) ... See More ⇒

Detailed specifications: SSPL6040, SSPL6040D, SSF80100, SSF8205, SSF8205A, SSF8205U, SSF8205UH2, SSF8421, 2N7002, SSF8521, SSF8810, SSF8822, SSF8N60, SSF8N65, SSF8N80, SSF8N80F, SSF8N80ZH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.