All MOSFET. SSF8822 Datasheet


SSF8822 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSF8822

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11.5 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: TSSOP8

SSF8822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SSF8822 Datasheet (PDF)

0.1. ssf8822.pdf Size:304K _silikron


SSF8822 D1 D2 DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2 with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S1 S2 facilitated by its common-drain configuration. Marking and pin Assignment GENERAL FEATURES ● V = 20V,I = 7A DS

9.1. ssf8810.pdf Size:534K _silikron


 SSF8810 Main Product Characteristics: VDSS 20V RDS(on) 14mΩ (typ.) ID 8A① Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Ultra low on-resistance with low gate charge  High Power and current handing capability  150℃ operating temperature  G/S ESD protect 2KV (HBM) Description: Th

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