All MOSFET. SSF8822 Datasheet

 

SSF8822 Datasheet and Replacement


   Type Designator: SSF8822
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP8
 

 SSF8822 substitution

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SSF8822 Datasheet (PDF)

 ..1. Size:304K  silikron
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SSF8822

SSF8822 D1D2DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S1 S2facilitated by its common-drain configuration. Marking and pin Assignment GENERAL FEATURES V = 20V,I = 7A DS

 9.1. Size:534K  silikron
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SSF8822

SSF8810 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description: Th

Datasheet: SSF8205 , SSF8205A , SSF8205U , SSF8205UH2 , SSF8421 , SSF8509 , SSF8521 , SSF8810 , 5N60 , SSF8N60 , SSF8N65 , SSF8N80 , SSF8N80F , SSF8N80ZH , SSF8NP60U , SSF9435 , SSF9926 .

History: JFQM3N120E | RFP8P08 | IPP08CNE8NG | SVF4N60CAF | WMS175N10HG4 | HGB017N10S | VS4802GPHT

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