SSF9N90ZH Specs and Replacement

Type Designator: SSF9N90ZH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO247

SSF9N90ZH substitution

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SSF9N90ZH datasheet

 ..1. Size:501K  silikron
 ssf9n90zh.pdf pdf_icon

SSF9N90ZH

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 7.1. Size:943K  samsung
 ssf9n90a.pdf pdf_icon

SSF9N90ZH

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 9.1. Size:935K  samsung
 ssf9n80a.pdf pdf_icon

SSF9N90ZH

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

Detailed specifications: SSF8N60, SSF8N65, SSF8N80, SSF8N80F, SSF8N80ZH, SSF8NP60U, SSF9435, SSF9926, AON7410, SSFK3204, SSFK3208, SSFD3004, SSFD3005, SSFD3006, SSFD4004, SSFD4024, SSFD6035

Keywords - SSF9N90ZH MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.