SSF9N90ZH Datasheet and Replacement. Cross Reference Search

SSF9N90ZH Datasheet (PDF)

..1. Size:501K silikron
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SSF9N90ZHMain Product Characteristics: VDSS 900V RDS(on) 1.2 (typ.) ID 9ATO-247Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

7.1. Size:943K samsung
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.1. Size:935K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: SSF8N60 , SSF8N65 , SSF8N80 , SSF8N80F , SSF8N80ZH , SSF8NP60U , SSF9435 , SSF9926 , RFP50N06 , SSFK3204 , SSFK3208 , SSFD3004 , SSFD3005 , SSFD3006 , SSFD4004 , SSFD4024 , SSFD6035 .