All MOSFET. SSFD3005 Datasheet

 

SSFD3005 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSFD3005
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO252E-2-M

 SSFD3005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSFD3005 Datasheet (PDF)

 ..1. Size:222K  silikron
 ssfd3005.pdf

SSFD3005 SSFD3005

SSFD3005DDESCRIPTION The SSFD3005 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

 7.1. Size:668K  silikron
 ssfd3006.pdf

SSFD3005 SSFD3005

SSFD3006 Main Product Characteristics: VDSS 30V SSF3612DSSF3612DSSF3612DSSF3612DSSFD3006SSFD3006 RDS(on) 3.8m (typ.) ID 90A TO-252 (D-PAK)Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance wi

 7.2. Size:293K  silikron
 ssfd3004.pdf

SSFD3005 SSFD3005

SSFD3004DDESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =55A RDS(ON)

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History: MMF80R450PTH

 

 
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