All MOSFET. SSFD6035 Datasheet

 

SSFD6035 Datasheet and Replacement


   Type Designator: SSFD6035
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DPAK
 

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SSFD6035 Datasheet (PDF)

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SSFD6035

SSFD6035DDESCRIPTION The SSFD6035 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 60V,ID =-26A RDS(ON)

 8.1. Size:1083K  silikron
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SSFD6035

SSFD6046 Feathers: ID =12A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=50mmax. Fully characterized avalanche voltage and current Description: The SSFD6046 is a new generation of middle voltage NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical SSFD6046param

Datasheet: SSF9N90ZH , SSFK3204 , SSFK3208 , SSFD3004 , SSFD3005 , SSFD3006 , SSFD4004 , SSFD4024 , IRFP450 , SSFD6046 , SSFM1022 , SSFM2506 , SSFM3008 , SSFM3008H1 , SSFM3008L , SSFM8005 , SSFN2220 .

History: SRN1865FD | NCEP1575GU

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