SSFD6046 Specs and Replacement

Type Designator: SSFD6046

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: DPAK

SSFD6046 substitution

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SSFD6046 datasheet

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SSFD6046

SSFD6046 Feathers ID =12A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=50m max. Fully characterized avalanche voltage and current Description The SSFD6046 is a new generation of middle voltage N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical SSFD6046 param... See More ⇒

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SSFD6046

SSFD6035 D DESCRIPTION The SSFD6035 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 60V,ID =-26A RDS(ON) ... See More ⇒

Detailed specifications: SSFK3204, SSFK3208, SSFD3004, SSFD3005, SSFD3006, SSFD4004, SSFD4024, SSFD6035, AON7506, SSFM1022, SSFM2506, SSFM3008, SSFM3008H1, SSFM3008L, SSFM8005, SSFN2220, SSFN2269

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