All MOSFET. SSFD6046 Datasheet

 

SSFD6046 Datasheet and Replacement


   Type Designator: SSFD6046
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

SSFD6046 Datasheet (PDF)

 ..1. Size:1083K  silikron
 ssfd6046.pdf pdf_icon

SSFD6046

SSFD6046 Feathers: ID =12A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=50mmax. Fully characterized avalanche voltage and current Description: The SSFD6046 is a new generation of middle voltage NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical SSFD6046param

 8.1. Size:322K  silikron
 ssfd6035.pdf pdf_icon

SSFD6046

SSFD6035DDESCRIPTION The SSFD6035 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 60V,ID =-26A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - SSFD6046 MOSFET datasheet

 SSFD6046 cross reference
 SSFD6046 equivalent finder
 SSFD6046 lookup
 SSFD6046 substitution
 SSFD6046 replacement

 

 
Back to Top

 


 
.