SSFN3317 Specs and Replacement

Type Designator: SSFN3317

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN3X3-8L

SSFN3317 substitution

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SSFN3317 datasheet

 ..1. Size:192K  silikron
 ssfn3317.pdf pdf_icon

SSFN3317

SSFN3317 D DESCRIPTION The SSFN3317 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-7A RDS(ON) ... See More ⇒

 7.1. Size:192K  silikron
 ssfn3313.pdf pdf_icon

SSFN3317

SSFN3313 D DESCRIPTION The SSFN3313 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-8A RDS(ON) ... See More ⇒

Detailed specifications: SSFM3008H1, SSFM3008L, SSFM8005, SSFN2220, SSFN2269, SSFN2316E, SSFN2569, SSFN3313, RFP50N06, SSFN6816, SSFT3904, SSFT3904J7-HF, SSFT3904U, SSFT3906, SSFT4002, SSFT4003, SSFT4003A

Keywords - SSFN3317 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs