All MOSFET. FSW25N50A Datasheet

 

FSW25N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FSW25N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 96 nC
   trⓘ - Rise Time: 117 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3PN

 FSW25N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSW25N50A Datasheet (PDF)

 ..1. Size:234K  inpower semi
 fsw25n50a.pdf

FSW25N50A FSW25N50A

FSW25N50AN-Channel MOSFET PbLead Free Package and FinishApplications: Uninterruptible Power Supply(UPS)VDSS RDS(ON) (Typ.) ID LCD Panel Power 500V 0.18 25A SMPS Power DC-AC InverterFSW25N50 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability ImprovedGDSOrdering InformationPART NU

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