FTQ02N65B PDF and Equivalents Search

 

FTQ02N65B Specs and Replacement

Type Designator: FTQ02N65B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 28.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO126

FTQ02N65B substitution

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FTQ02N65B datasheet

 ..1. Size:275K  inpower semi
 ftp02n65b fta02n65b ftq02n65b.pdf pdf_icon

FTQ02N65B

FTP02N65B FTA02N65B FTQ02N65B N-Channel MOSFET Pb Lead Free Package and Finish Applications Adaptor VDSS RDS(ON) (Max.) ID Charger 650V 8.0 1.5A SMPS Standby Power LCD Panel Power Features RoHS Compliant Low ON Resistance D Low Gate Charge G G Peak Current vs Pulse Width Curve DS DS Inductive Switching Curves TO-220 TO-220F G Order... See More ⇒

Detailed specifications: FTD220, FTU220, FTP02N60C, FTA02N60C, FTP02N65, FTA02N65, FTP02N65B, FTA02N65B, K3569, FTP04N60C, FTA04N60C, FTP04N60D, FTA04N60D, FTP04N65, FTA04N65, FTP06N60C, FTA06N60C

Keywords - FTQ02N65B MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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