All MOSFET. FTQ02N65B Datasheet

 

FTQ02N65B MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTQ02N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 28.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO126

 FTQ02N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTQ02N65B Datasheet (PDF)

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 ftp02n65b fta02n65b ftq02n65b.pdf

FTQ02N65B FTQ02N65B

FTP02N65BFTA02N65B FTQ02N65BN-Channel MOSFET PbLead Free Package and FinishApplications: AdaptorVDSS RDS(ON) (Max.) ID Charger650V 8.0 1.5A SMPS Standby Power LCD Panel PowerFeatures: RoHS Compliant Low ON ResistanceD Low Gate ChargeGG Peak Current vs Pulse Width CurveDS DS Inductive Switching Curves TO-220 TO-220FGOrder

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME4856

 

 
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