All MOSFET. FTQ02N65B Datasheet

 

FTQ02N65B Datasheet and Replacement


   Type Designator: FTQ02N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 28.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO126
 

 FTQ02N65B substitution

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FTQ02N65B Datasheet (PDF)

 ..1. Size:275K  inpower semi
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FTQ02N65B

FTP02N65BFTA02N65B FTQ02N65BN-Channel MOSFET PbLead Free Package and FinishApplications: AdaptorVDSS RDS(ON) (Max.) ID Charger650V 8.0 1.5A SMPS Standby Power LCD Panel PowerFeatures: RoHS Compliant Low ON ResistanceD Low Gate ChargeGG Peak Current vs Pulse Width CurveDS DS Inductive Switching Curves TO-220 TO-220FGOrder

Datasheet: FTD220 , FTU220 , FTP02N60C , FTA02N60C , FTP02N65 , FTA02N65 , FTP02N65B , FTA02N65B , SPP20N60C3 , FTP04N60C , FTA04N60C , FTP04N60D , FTA04N60D , FTP04N65 , FTA04N65 , FTP06N60C , FTA06N60C .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - FTQ02N65B MOSFET datasheet

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