All MOSFET. FTU01N60C Datasheet

 

FTU01N60C Datasheet and Replacement


   Type Designator: FTU01N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO251
 

 FTU01N60C substitution

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FTU01N60C Datasheet (PDF)

 ..1. Size:288K  inpower semi
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FTU01N60C

FTU01N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) IDAdaptor Charger600V 8.0 1.1ASMPSFeatures: RoHS Compliant D Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesGG DSOrdering InformationPART NUMBER PACKAGE BRAND STO-251Not to ScaleFTU01N

Datasheet: FTP06N65 , FTA06N65 , FTP10N60C , FTA10N60C , FTP11N08 , FTP18N06 , FTP18N06N , FTP22N06B , STP80NF70 , L1N60 , L2N600 , L4N60 , L75N75 , LIRFZ44N , SPI80N03S2-03 , SPP80N03S2-03 , SPB80N03S2-03 .

History: RDD023N50 | MS8N50

Keywords - FTU01N60C MOSFET datasheet

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