FTU01N60C PDF and Equivalents Search

 

FTU01N60C Specs and Replacement

Type Designator: FTU01N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO251

FTU01N60C substitution

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FTU01N60C datasheet

 ..1. Size:288K  inpower semi
 ftu01n60c.pdf pdf_icon

FTU01N60C

FTU01N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Max.) ID Adaptor Charger 600V 8.0 1.1A SMPS Features RoHS Compliant D Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves G G D S Ordering Information PART NUMBER PACKAGE BRAND S TO-251 Not to Scale FTU01N... See More ⇒

Detailed specifications: FTP06N65, FTA06N65, FTP10N60C, FTA10N60C, FTP11N08, FTP18N06, FTP18N06N, FTP22N06B, STP80NF70, L1N60, L2N600, L4N60, L75N75, LIRFZ44N, SPI80N03S2-03, SPP80N03S2-03, SPB80N03S2-03

Keywords - FTU01N60C MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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