L4N60 MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

L4N60 Specs and Replacement

Type Designator: L4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220 TO220F

L4N60 substitution

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L4N60 datasheet

..1. Size:521K lrc
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LESHAN RADIO COMPANY, LTD. L4N60 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The LRC L4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed 1 switching applications i... See More ⇒

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BL4N60A Power MOSFET 1 Description Step-Down Converter BL4N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

Detailed specifications: FTA10N60C, FTP11N08, FTP18N06, FTP18N06N, FTP22N06B, FTU01N60C, L1N60, L2N600, AO4407, L75N75, LIRFZ44N, SPI80N03S2-03, SPP80N03S2-03, SPB80N03S2-03, STP80NF70, CL616BA, P0160AI