All MOSFET. P0260EIS Datasheet

 

P0260EIS Datasheet and Replacement


   Type Designator: P0260EIS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.4 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO251
 

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P0260EIS Datasheet (PDF)

 ..1. Size:730K  unikc
 p0260eis.pdf pdf_icon

P0260EIS

P0260EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4

 7.1. Size:806K  unikc
 p0260ei.pdf pdf_icon

P0260EIS

P0260EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4AIDM8Pulsed Drain Current1

 7.2. Size:167K  niko-sem
 p0260eia.pdf pdf_icon

P0260EIS

N-Channel Enhancement Mode P0260EIANIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 4.85 2A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 VTC = 25 C

 8.1. Size:780K  unikc
 p0260etf.pdf pdf_icon

P0260EIS

P0260ETFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3 @VGS = 10V600V 2ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.3AIDM8Pulsed Drain Curre

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Datasheet: P0170AI , P0260AD , P0260AI , P0260AT , P0260ATF , P0260ATFS , P0260ED , P0260EI , 8N60 , P0260ETF , P0270ATF , P0270ATFS , P0303BD , P0303BKA , P0303BV , P0320AL , P0403BD .

History: SIHFU9014

Keywords - P0260EIS MOSFET datasheet

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