P0260ETF PDF and Equivalents Search

 

P0260ETF Specs and Replacement


   Type Designator: P0260ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO220F
 

 P0260ETF substitution

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P0260ETF datasheet

 ..1. Size:780K  unikc
 p0260etf.pdf pdf_icon

P0260ETF

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3 @VGS = 10V 600V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 8 Pulsed Drain Curre... See More ⇒

 8.1. Size:806K  unikc
 p0260ei.pdf pdf_icon

P0260ETF

P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1... See More ⇒

 8.2. Size:771K  unikc
 p0260ed.pdf pdf_icon

P0260ETF

P0260ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1... See More ⇒

 8.3. Size:730K  unikc
 p0260eis.pdf pdf_icon

P0260ETF

P0260EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 ... See More ⇒

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Detailed specifications: P0260AD , P0260AI , P0260AT , P0260ATF , P0260ATFS , P0260ED , P0260EI , P0260EIS , P60NF06 , P0270ATF , P0270ATFS , P0303BD , P0303BKA , P0303BV , P0320AL , P0403BD , P0403BDA .

History: 7N65L-TF3T-T | MMBFJ177L | IXTY01N100 | IXTX40P50P | SWN7N65DA | IXTU5N50P | PTA15N50

Keywords - P0260ETF MOSFET specs

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