All MOSFET. P0270ATF Datasheet

 

P0270ATF MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0270ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm
   Package: TO220F

 P0270ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0270ATF Datasheet (PDF)

 0.1. Size:496K  unikc
 p0270atf-s.pdf

P0270ATF P0270ATF

P0270ATF / P0270ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.3 @VGS = 10V700V 2ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 30 VTC = 25 C2IDContinuous Drain Current2TC = 100 AC1IDM8Pulsed Drain Current1EAS5 m

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