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P0420AI Specs and Replacement

Type Designator: P0420AI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO251

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P0420AI datasheet

 0.1. Size:477K  unikc
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P0420AI

P0420AI / P0420AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 0.7 @VGS = 10V 4A TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 TC = 25 C 4 ID Continuous Drain Current TC = 100 C 3 A IDM 16 Pulsed ... See More ⇒

Detailed specifications: P0320AL, P0403BD, P0403BDA, P0403BDG, P0403BT, P0403BV, P0403BVG, P0420AD, K2611, P0425AD, P0425AI, P7004EM, P7004EV, P7006BL, P7502CMG, P7503BMG, P75N02LDG

Keywords - P0420AI MOSFET specs

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