P7503BMG Specs and Replacement
Type Designator: P7503BMG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT23
P7503BMG substitution
- MOSFET ⓘ Cross-Reference Search
P7503BMG datasheet
p7503bmg.pdf
P7503BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 75m @VGS = 4.5V 2.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 2.5 ID Continuous Drain Current TA = 70 C 1.6 A IDM 10 Pulsed Drain Current1 IAS Avalanche Current 12 ... See More ⇒
Detailed specifications: P0420AD, P0420AI, P0425AD, P0425AI, P7004EM, P7004EV, P7006BL, P7502CMG, IRFP064N, P75N02LDG, PZP003BYB, PZP103BYB, TD304BH, TD357EG, TD381BA, TD422BL, P4506BD
Keywords - P7503BMG MOSFET specs
P7503BMG cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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