All MOSFET. P75N02LDG Datasheet

 

P75N02LDG Datasheet and Replacement


   Type Designator: P75N02LDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 712 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
 

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P75N02LDG Datasheet (PDF)

 ..1. Size:613K  unikc
p75n02ldg.pdf pdf_icon

P75N02LDG

P75N02LDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5m @VGS = 10V25V 75ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C75IDContinuous Drain CurrentTC = 100 C50AIDM170Pulsed Drain Current1IASAvalanche Current 45E

 9.1. Size:759K  1
wfp75n08.pdf pdf_icon

P75N02LDG

Wisdom SemiconductorWFP75N08N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175C)3. Source General DescriptionTO-220This Power

 9.2. Size:72K  1
sup75n06-08 sub75n06-08.pdf pdf_icon

P75N02LDG

SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous

 9.3. Size:204K  motorola
mtp75n03hdl.pdf pdf_icon

P75N02LDG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N03HDL/DAdvanced InformationMTP75N03HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP30P10GP

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