All MOSFET. P75N02LDG Datasheet

 

P75N02LDG MOSFET. Datasheet pdf. Equivalent


   Type Designator: P75N02LDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 712 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252

 P75N02LDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P75N02LDG Datasheet (PDF)

 ..1. Size:613K  unikc
p75n02ldg.pdf

P75N02LDG P75N02LDG

P75N02LDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5m @VGS = 10V25V 75ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C75IDContinuous Drain CurrentTC = 100 C50AIDM170Pulsed Drain Current1IASAvalanche Current 45E

 9.1. Size:759K  1
wfp75n08.pdf

P75N02LDG P75N02LDG

Wisdom SemiconductorWFP75N08N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175C)3. Source General DescriptionTO-220This Power

 9.2. Size:72K  1
sup75n06-08 sub75n06-08.pdf

P75N02LDG P75N02LDG

SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous

 9.3. Size:204K  motorola
mtp75n03hdl.pdf

P75N02LDG P75N02LDG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N03HDL/DAdvanced InformationMTP75N03HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.R

 9.4. Size:214K  motorola
mtp75n05hd.pdf

P75N02LDG P75N02LDG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N05HD/DDesigner's Data SheetMTP75N05HDHDTMOS E-FETMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.RDS

 9.5. Size:275K  motorola
mtp75n06hd.pdf

P75N02LDG P75N02LDG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N06HD/DDesigner's Data SheetMTP75N06HDHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS EFET is designed to 75 AMPERESwithstand high energy in the avalanche and commutation modes. RDS(on) = 10.0

 9.6. Size:235K  motorola
mtp75n03hd.pdf

P75N02LDG P75N02LDG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N03HDL/DAdvanced InformationMTP75N03HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.R

 9.7. Size:112K  renesas
np75n04yuk.pdf

P75N02LDG P75N02LDG

Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ

 9.8. Size:222K  renesas
np75n04yug.pdf

P75N02LDG P75N02LDG

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

 9.9. Size:105K  renesas
np75n04vdk.pdf

P75N02LDG P75N02LDG

Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF

 9.10. Size:112K  renesas
np75n055yuk.pdf

P75N02LDG P75N02LDG

Preliminary Data Sheet NP75N055YUK R07DS1005EJ010055 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t

 9.11. Size:92K  renesas
np75n04vuk.pdf

P75N02LDG P75N02LDG

Preliminary Data Sheet NP75N04VUK R07DS0954EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF T

 9.12. Size:626K  fairchild semi
fdp75n08 fdp75n08a.pdf

P75N02LDG P75N02LDG

July 2006 TMUniFETFDP75N08A75V N-Channel MOSFETFeatures Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 86pF)This advanced technology has been especially tailored to

 9.13. Size:67K  vishay
sup75n03-07 sub75n03-07.pdf

P75N02LDG P75N02LDG

SUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 V 75a30300.01 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N03-07Top ViewN-Channel MOSFETSUP75N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra

 9.14. Size:74K  vishay
sup75n05-06 sub75n05-06.pdf

P75N02LDG P75N02LDG

SUP/SUB75N05-06Vishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-06Top ViewN-Channel MOSFETSUP75N05-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75a

 9.15. Size:69K  vishay
sup75n03-04.pdf

P75N02LDG P75N02LDG

SUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Rated Maximum Junction 30 0.00475aRoHS*TemperatureCOMPLIANTTO-220ABDTO-263DRAIN connected to TABGDRAIN connected to TAB G D STop ViewSUB75N03-04G D STop ViewSUP75N03-04SOr

 9.16. Size:66K  vishay
sup75n04-05l sub75n04-05l.pdf

P75N02LDG P75N02LDG

SUP/SUB75N04-05LVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0055 @ VGS = 10 V 75a400.0065 @ VGS = 4.5 V 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N04-05LTop ViewN-Channel MOSFETSUP75N04-05LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo

 9.17. Size:84K  vishay
sup75n08-10 sub75n08-10.pdf

P75N02LDG P75N02LDG

SUP/SUB75N08-10Vishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.010 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-10Top ViewN-Channel MOSFETSUP75N08-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75

 9.18. Size:71K  vishay
sup75n06-07l sub75n06-07l.pdf

P75N02LDG P75N02LDG

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET

 9.19. Size:72K  vishay
sup75n05-06a sub75n05-06a.pdf

P75N02LDG P75N02LDG

SUP/SUB75N05-06ANew ProductVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewN-Channel MOSFETOrdering Information: SUP75N05-06A Ordering Information: SUB75N05-06AABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

 9.20. Size:88K  vishay
sub75n06-07l sup75n06-07l.pdf

P75N02LDG P75N02LDG

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET

 9.21. Size:106K  vishay
sup75n05-07 sub75n05-07.pdf

P75N02LDG P75N02LDG

SUP/SUB75N05-07New ProductVishay SiliconixN-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 Va55 "75 a55 "750.009 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-07Top ViewN-Channel MOSFETSUP75N05-07ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter S

 9.22. Size:106K  vishay
sup75n08-09l sub75n08-09l.pdf

P75N02LDG P75N02LDG

SUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V75 "75 a75 "75 a0.011 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-09LTop ViewN-Channel MOSFETSUP75N08-09LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter

 9.23. Size:102K  vishay
sup75n06-12l sub75n06-12l.pdf

P75N02LDG P75N02LDG

SUP/SUB75N06-12LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.012 @ VGS = 10 V 7560600.014 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-12LTop ViewN-Channel MOSFETSUP75N06-12LABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit

 9.24. Size:73K  vishay
sup75n06-08 sub75n06-08.pdf

P75N02LDG P75N02LDG

SUP/SUB75N06-08Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75

 9.25. Size:74K  onsemi
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf

P75N02LDG P75N02LDG

NTP75N03-06,NTB75N03-06Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis 20 VGS gate drive vertical Power MOSFET is a generalpurpose part that provides the best of design available today in a lowV(BR)DSS RDS(on) TYP ID MAXcost power package. This power MOSFET is designed to withstandhigh energy in the avalanche and commutation modes. The30

 9.26. Size:79K  onsemi
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf

P75N02LDG P75N02LDG

NTP75N06, NTB75N06Power MOSFET75 Amps, 60 Volts, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.75 AMPERES, 60 VOLTSFeaturesRDS(on) = 9.5 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters

 9.27. Size:1266K  onsemi
fdp75n08a.pdf

P75N02LDG P75N02LDG

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.28. Size:91K  onsemi
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf

P75N02LDG P75N02LDG

NTB75N03R, NTP75N03RPower MOSFET75 Amps, 25 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss25 VOLTS Low Gate ChargeRDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available4MAXIMUM RATINGS (TJ = 25C Unless otherwis

 9.29. Size:79K  onsemi
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf

P75N02LDG P75N02LDG

NTP75N06L, NTB75N06LPower MOSFET75 Amps, 60 Volts, LogicLevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in75 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgecircuits.RDS(on) = 11 mWFeaturesN-Channel Pb-Free Packages are Available DTypical Applications Power SuppliesG

 9.30. Size:72K  onsemi
ntb75n03l09t4 ntp75n03l09 ntp75n03l09 ntb75n03l09.pdf

P75N02LDG P75N02LDG

NTP75N03L09,NTB75N03L09Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Vertical Power MOSFET is a general purpose part75 AMPERES, 30 VOLTSthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.RDS(on) = 8 mWThe drain-to-source diode has a ideal fas

 9.31. Size:105K  general semi
gfp75n03.pdf

P75N02LDG P75N02LDG

GFP75N03N-Channel Enhancement-Mode MOSFETV 30V R 6.5m I 80ADS DS(ON) DDTO-220AB0.185 (4.70)0.170 (4.31)0.154 (3.91)Dia.0.415 (10.54) G0.142 (3.60)0.055 (1.39)Max.0.045 (1.14)0.113 (2.87)0.102 (2.56)*S0.155 (3.93)D0.134 (3.40) Features0.603 (15.32)0.573 (14.55) Advanced Process Technology0.410 (10.41)0.635 (16.13) 0.360 (9.14)0.350 (8.89

 9.32. Size:324K  cet
cep75n06 ceb75n06.pdf

P75N02LDG P75N02LDG

CEP75N06/CEB75N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 87A, RDS(ON) = 12m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

 9.33. Size:418K  cet
cep75n06g ceb75n06g.pdf

P75N02LDG P75N02LDG

CEP75N06G/CEB75N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 75A, RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 9.34. Size:93K  ape
ap75n07agp-hf.pdf

P75N02LDG P75N02LDG

AP75N07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, rug

 9.35. Size:153K  ape
ap75n07agp.pdf

P75N02LDG P75N02LDG

AP75N07AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS Compliant ProductSDescriptionAP75N07A series are from Advanced Power i

 9.36. Size:95K  ape
ap75n07gi-hf.pdf

P75N02LDG P75N02LDG

AP75N07GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

 9.37. Size:126K  ape
ap75n07gw.pdf

P75N02LDG P75N02LDG

AP75N07GWRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 9.38. Size:152K  ape
ap75n07gp.pdf

P75N02LDG P75N02LDG

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

 9.39. Size:192K  ape
ap75n07gs p.pdf

P75N02LDG P75N02LDG

AP75N07GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, TO-220(P)DSruggedized device design,

 9.40. Size:165K  ape
ap75n07gs.pdf

P75N02LDG P75N02LDG

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

 9.41. Size:97K  ape
ap75n07gsp-hf.pdf

P75N02LDG P75N02LDG

AP75N07GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 9.42. Size:270K  shantou-huashan
hfp75n08.pdf

P75N02LDG P75N02LDG

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation

 9.43. Size:143K  tysemi
kup75n08.pdf

P75N02LDG P75N02LDG

SMDType ICDIP Type MOSFETProduct specificationKUP75N08 Features VDS=75V,RDS(on)=0.009@VGS=10V,ID=30A VDS=75V,RDS(on)=0.011@VGS=4.5V,ID=20A 1 Gate2 Drain3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS 75 VGate-to-Source Voltage VGS 20 VID 75Continuous Drain Current @TC 25 =@TC

 9.44. Size:1259K  winsemi
sfp75n08r.pdf

P75N02LDG P75N02LDG

SFP75N08RSFP75N08RSFP75N08RSFP75N08RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.015)@V =10vDS(on) GS Gate Charge(Typical 80 nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis advancedplanar stripe,DMOS technology. This lates

 9.45. Size:750K  cn vbsemi
sup75n08-10.pdf

P75N02LDG P75N02LDG

SUP75N08-10www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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