P75N02LDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5m @VGS = 10V25V 75ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C75IDContinuous Drain CurrentTC = 100 C50AIDM170Pulsed Drain Current1IASAvalanche Current 45E

Wisdom SemiconductorWFP75N08N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175C)3. Source General DescriptionTO-220This Power

SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N03HDL/DAdvanced InformationMTP75N03HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.R

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N05HD/DDesigner's Data SheetMTP75N05HDHDTMOS E-FETMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.RDS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N06HD/DDesigner's Data SheetMTP75N06HDHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS EFET is designed to 75 AMPERESwithstand high energy in the avalanche and commutation modes. RDS(on) = 10.0

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP75N03HDL/DAdvanced InformationMTP75N03HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS EFET is designed to75 AMPERESwithstand high energy in the avalanche and commutation modes.R

Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF

Preliminary Data Sheet NP75N055YUK R07DS1005EJ010055 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t

Preliminary Data Sheet NP75N04VUK R07DS0954EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF T

July 2006 TMUniFETFDP75N08A75V N-Channel MOSFETFeatures Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 86pF)This advanced technology has been especially tailored to

SUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 V 75a30300.01 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N03-07Top ViewN-Channel MOSFETSUP75N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra

SUP/SUB75N05-06Vishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-06Top ViewN-Channel MOSFETSUP75N05-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75a

SUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Rated Maximum Junction 30 0.00475aRoHS*TemperatureCOMPLIANTTO-220ABDTO-263DRAIN connected to TABGDRAIN connected to TAB G D STop ViewSUB75N03-04G D STop ViewSUP75N03-04SOr

SUP/SUB75N04-05LVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0055 @ VGS = 10 V 75a400.0065 @ VGS = 4.5 V 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N04-05LTop ViewN-Channel MOSFETSUP75N04-05LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo

SUP/SUB75N08-10Vishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.010 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-10Top ViewN-Channel MOSFETSUP75N08-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET

SUP/SUB75N05-06ANew ProductVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewN-Channel MOSFETOrdering Information: SUP75N05-06A Ordering Information: SUB75N05-06AABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET

SUP/SUB75N05-07New ProductVishay SiliconixN-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 Va55 "75 a55 "750.009 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-07Top ViewN-Channel MOSFETSUP75N05-07ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter S

SUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V75 "75 a75 "75 a0.011 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-09LTop ViewN-Channel MOSFETSUP75N08-09LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter

SUP/SUB75N06-12LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.012 @ VGS = 10 V 7560600.014 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-12LTop ViewN-Channel MOSFETSUP75N06-12LABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit

SUP/SUB75N06-08Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75

NTP75N03-06,NTB75N03-06Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis 20 VGS gate drive vertical Power MOSFET is a generalpurpose part that provides the best of design available today in a lowV(BR)DSS RDS(on) TYP ID MAXcost power package. This power MOSFET is designed to withstandhigh energy in the avalanche and commutation modes. The30

NTP75N06, NTB75N06Power MOSFET75 Amps, 60 Volts, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.75 AMPERES, 60 VOLTSFeaturesRDS(on) = 9.5 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTB75N03R, NTP75N03RPower MOSFET75 Amps, 25 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss25 VOLTS Low Gate ChargeRDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available4MAXIMUM RATINGS (TJ = 25C Unless otherwis

NTP75N06L, NTB75N06LPower MOSFET75 Amps, 60 Volts, LogicLevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in75 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgecircuits.RDS(on) = 11 mWFeaturesN-Channel Pb-Free Packages are Available DTypical Applications Power SuppliesG

NTP75N03L09,NTB75N03L09Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Vertical Power MOSFET is a general purpose part75 AMPERES, 30 VOLTSthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.RDS(on) = 8 mWThe drain-to-source diode has a ideal fas

GFP75N03N-Channel Enhancement-Mode MOSFETV 30V R 6.5m I 80ADS DS(ON) DDTO-220AB0.185 (4.70)0.170 (4.31)0.154 (3.91)Dia.0.415 (10.54) G0.142 (3.60)0.055 (1.39)Max.0.045 (1.14)0.113 (2.87)0.102 (2.56)*S0.155 (3.93)D0.134 (3.40) Features0.603 (15.32)0.573 (14.55) Advanced Process Technology0.410 (10.41)0.635 (16.13) 0.360 (9.14)0.350 (8.89

CEP75N06/CEB75N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 87A, RDS(ON) = 12m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

CEP75N06G/CEB75N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 75A, RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

AP75N07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, rug

AP75N07AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS Compliant ProductSDescriptionAP75N07A series are from Advanced Power i

AP75N07GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

AP75N07GWRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

AP75N07GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, TO-220(P)DSruggedized device design,

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

AP75N07GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation

SMDType ICDIP Type MOSFETProduct specificationKUP75N08 Features VDS=75V,RDS(on)=0.009@VGS=10V,ID=30A VDS=75V,RDS(on)=0.011@VGS=4.5V,ID=20A 1 Gate2 Drain3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS 75 VGate-to-Source Voltage VGS 20 VID 75Continuous Drain Current @TC 25 =@TC

SFP75N08RSFP75N08RSFP75N08RSFP75N08RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.015)@V =10vDS(on) GS Gate Charge(Typical 80 nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis advancedplanar stripe,DMOS technology. This lates

SUP75N08-10www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backl