TD422BL Specs and Replacement
Type Designator: TD422BL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
TD422BL substitution
- MOSFET ⓘ Cross-Reference Search
TD422BL datasheet
td422bl.pdf
TD422BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 30V 76A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 76 ID Continuous Drain Current2 TC = 100 C 45 A IDM 135 Pulsed Drain Current1 IAS Avalanche Current 35 EA... See More ⇒
Detailed specifications: P7502CMG, P7503BMG, P75N02LDG, PZP003BYB, PZP103BYB, TD304BH, TD357EG, TD381BA, 20N60, P4506BD, P4506BV, P45N02LDG, P45N02LI, P45N03LTFG, P0460AD, P0460AI, P0460AS
Keywords - TD422BL MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MTP10N10E
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