All MOSFET. P0510AT Datasheet

 

P0510AT Datasheet and Replacement


   Type Designator: P0510AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 132 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 146 nC
   tr ⓘ - Rise Time: 194 nS
   Cossⓘ - Output Capacitance: 851 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
 

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P0510AT Datasheet (PDF)

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P0510AT

P0510ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.5m @VGS = 10V100V 132ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 25TC = 25 C132IDContinuous Drain Current2TC = 100 C83AIDM350Pulsed Drain Cu

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Keywords - P0510AT MOSFET datasheet

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