P0510AT Datasheet and Replacement
Type Designator: P0510AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 132 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 194 nS
Cossⓘ - Output Capacitance: 851 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
P0510AT substitution
P0510AT Datasheet (PDF)
p0510at.pdf
P0510ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.5m @VGS = 10V100V 132ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 25TC = 25 C132IDContinuous Drain Current2TC = 100 C83AIDM350Pulsed Drain Cu
Datasheet: P0465CIS , P0465CS , P0465CT , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS , P0502CEA , IRLB4132 , P0550AD , P0550AT , P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF .
History: NTLUS4C12N | IPB80N04S4L-04
Keywords - P0510AT MOSFET datasheet
P0510AT cross reference
P0510AT equivalent finder
P0510AT lookup
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P0510AT replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NTLUS4C12N | IPB80N04S4L-04
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