PZD502CYB Spec and Replacement
Type Designator: PZD502CYB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: SOT523
PZD502CYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PZD502CYB Specs
pzd502cyb.pdf
PZD502CYB N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 450m @VGS = 4.5V 0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TA = 25 C 0.7 ID Continuous Drain Current TA = 70 A C 0.6 IDM 2 Pulsed ... See More ⇒
pzd502cyb.pdf
PZD502CYB N-Channel Logic Level Enhancement NIKO-SEM SOT-523 Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 450m 0.7A 1. GATE 2. DRAIN ESD Protected Gate 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 20 V Gate-Source ... See More ⇒
pzd502cma.pdf
PZD502CMA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 450m @VGS = 4.5V 20V 1A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TA = 25 C 1 ID Continuous Drain Current TA = 70 A C 0.7 IDM 5 Pulsed ... See More ⇒
Detailed specifications: P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , IRFB3607 , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , PD485BA .
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