All MOSFET. PZD502CYB Datasheet

 

PZD502CYB MOSFET. Datasheet pdf. Equivalent

Type Designator: PZD502CYB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: SOT523

PZD502CYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZD502CYB Datasheet (PDF)

0.1. pzd502cyb.pdf Size:539K _unikc

PZD502CYB
PZD502CYB

PZD502CYB N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 450mΩ @VGS = 4.5V 0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 TA = 25 ° C 0.7 ID Continuous Drain Current TA = 70 ° A C 0.6 IDM 2 Pulsed

7.1. pzd502cma.pdf Size:415K _unikc

PZD502CYB
PZD502CYB

PZD502CMA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 450mΩ @VGS = 4.5V 20V 1A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 TA = 25 ° C 1 ID Continuous Drain Current TA = 70 ° A C 0.7 IDM 5 Pulsed

 

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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