PT530BA Datasheet and Replacement
Type Designator: PT530BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 89 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 364 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO220
PT530BA substitution
PT530BA Datasheet (PDF)
pt530ba.pdf
PT530BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID24.3m @VGS = 10V30V 89ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C89IDContinuous Drain Current2TC= 100 C56AIDM150Pulsed Drain Curren
Datasheet: P0550ED , P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , AON7506 , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA .
History: NTLJF3118NTAG | NTMS5838NLR2G
Keywords - PT530BA MOSFET datasheet
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History: NTLJF3118NTAG | NTMS5838NLR2G
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