All MOSFET. PT530BA Datasheet

 

PT530BA Datasheet and Replacement


   Type Designator: PT530BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 89 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO220
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PT530BA Datasheet (PDF)

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PT530BA

PT530BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID24.3m @VGS = 10V30V 89ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C89IDContinuous Drain Current2TC= 100 C56AIDM150Pulsed Drain Curren

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History: ALD1103DB | SQ9407EY-T1 | CHM85A3PAGP | SML100L16 | SFFX054Z | TK7P65W

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