PT542BA Spec and Replacement
Type Designator: PT542BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 647 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
PT542BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PT542BA Specs
pt542ba.pdf
PT542BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 40V 135A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC= 25 C 135 ID Continuous Drain Current2 TC= 100 C 85 A IDM 200 Pulsed Drain Current1... See More ⇒
Detailed specifications: P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , IRF530 , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA .
History: PZD502CYB
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