PT542BA Datasheet and Replacement
Type Designator: PT542BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 135 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 647 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
PT542BA substitution
PT542BA Datasheet (PDF)
pt542ba.pdf
PT542BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4m @VGS = 10V40V 135ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC= 25 C135IDContinuous Drain Current2TC= 100 C85AIDM200Pulsed Drain Current1
Datasheet: P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , STP80NF70 , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA .
History: IXTP26P20P | IRF533
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History: IXTP26P20P | IRF533
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