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PT542BA Spec and Replacement


   Type Designator: PT542BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 647 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220

 PT542BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT542BA Specs

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PT542BA

PT542BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 40V 135A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC= 25 C 135 ID Continuous Drain Current2 TC= 100 C 85 A IDM 200 Pulsed Drain Current1... See More ⇒

Detailed specifications: P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , IRF530 , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA .

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Keywords - PT542BA MOSFET specs

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