PD6A8BA MOSFET. Datasheet pdf. Equivalent
Type Designator: PD6A8BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 73 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 261 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm
Package: TO252
PD6A8BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PD6A8BA Datasheet (PDF)
1.1. pd6a8ba.pdf 
Size:513K _unikc
PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.2mΩ @VGS = 10V 40V 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 TC = 25 ° C 75 ID Continuous Drain Current2 TC = 100 ° C 47 A IDM 120 Pulsed Drain Curren
Datasheet: PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , IRFP4232 , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA , PD517BA , PD533BA , PD537BA .
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