All MOSFET. PD6A8BA Datasheet

 

PD6A8BA Datasheet and Replacement


   Type Designator: PD6A8BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 261 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO252
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PD6A8BA Datasheet (PDF)

 ..1. Size:513K  unikc
 pd6a8ba.pdf pdf_icon

PD6A8BA

PD6A8BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.2m @VGS = 10V40V 75ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C75IDContinuous Drain Current2TC = 100 C47AIDM120Pulsed Drain Curren

 ..2. Size:303K  niko-sem
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PD6A8BA

N-Channel Enhancement Mode PD6A8BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 6.2m 75A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , IRFB3607 , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA , PD517BA , PD533BA , PD537BA .

History: AP95T10AGR-HF | BSB280N15NZ3G | 12N65KG-TF1-T | BSZ240N12NS3G | R5016ANJ | ELM13401CA | DH150N12B

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