PD6A8BA Datasheet and Replacement
Type Designator: PD6A8BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 261 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO252
PD6A8BA substitution
PD6A8BA Datasheet (PDF)
pd6a8ba.pdf
PD6A8BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.2m @VGS = 10V40V 75ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C75IDContinuous Drain Current2TC = 100 C47AIDM120Pulsed Drain Curren
pd6a8ba.pdf
N-Channel Enhancement Mode PD6A8BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 6.2m 75A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 25
Datasheet: PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , IRFP450 , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA , PD517BA , PD533BA , PD537BA .
History: CS4N80P | PD648BA | CS4N70D | DMN2005LPK | DMN2009LSS
Keywords - PD6A8BA MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CS4N80P | PD648BA | CS4N70D | DMN2005LPK | DMN2009LSS
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